Presentation | 2010-01-28 40-km SMF transmission for 100-Gbit/s Ethernet system based on 25-Gbit/s 1.3um electroabsorption modulator integrated with DFB laser T Fujisawa, M Arai, N Fujiwara, W Kobayashi, T Tadokoro, K Tsuzuki, Y Akage, R Iga, T Yamanaka, F Kano, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed 1.3-um electroabsorption modulator integrated with DFB laser for middle- and long-distance 100 Gbit/s Ethernet. To ensure enough extinction ratio at 1.3-um band, tensile strained quantum well absorbing layer made with InGaAlAs-based material which has larger conduction band offset compared with that of InGaAsP. Butt-joint technique is employed to couple EA modulator and DFB laser in order to optimize the structure separately. Fabricated device is packaged to a butterfly module and the small-signal 3 dB bandwdth is 33 GHz. By using the module, we demonstrate 10- and 40-km transmission on single mode fiber at the modulation speed of 25 Gbit/s at 40 degrees Celcius. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 100 Gbit/s Ethernet / electroabsorption modulator / strained quantum well |
Paper # | PN2009-45,OPE2009-183,LQE2009-165 |
Date of Issue |
Conference Information | |
Committee | PN |
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Conference Date | 2010/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Photonic Network (PN) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 40-km SMF transmission for 100-Gbit/s Ethernet system based on 25-Gbit/s 1.3um electroabsorption modulator integrated with DFB laser |
Sub Title (in English) | |
Keyword(1) | 100 Gbit/s Ethernet |
Keyword(2) | electroabsorption modulator |
Keyword(3) | strained quantum well |
1st Author's Name | T Fujisawa |
1st Author's Affiliation | NTT Photonics Laboratories() |
2nd Author's Name | M Arai |
2nd Author's Affiliation | NTT Photonics Laboratories |
3rd Author's Name | N Fujiwara |
3rd Author's Affiliation | NTT Photonics Laboratories |
4th Author's Name | W Kobayashi |
4th Author's Affiliation | NTT Photonics Laboratories |
5th Author's Name | T Tadokoro |
5th Author's Affiliation | NTT Photonics Laboratories |
6th Author's Name | K Tsuzuki |
6th Author's Affiliation | NTT Photonics Laboratories |
7th Author's Name | Y Akage |
7th Author's Affiliation | NTT Photonics Laboratories |
8th Author's Name | R Iga |
8th Author's Affiliation | NTT Photonics Laboratories |
9th Author's Name | T Yamanaka |
9th Author's Affiliation | NTT Photonics Laboratories |
10th Author's Name | F Kano |
10th Author's Affiliation | NTT Photonics Laboratories |
Date | 2010-01-28 |
Paper # | PN2009-45,OPE2009-183,LQE2009-165 |
Volume (vol) | vol.109 |
Number (no) | 401 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |