Presentation 2010-06-25
Oxygen partial pressure dependences of electrical and optical properties of Al-doped ZnO thin films grown by gas flow sputtering at a low temperature
Takayoshi Sudo, Hirokuni Kondo, Hiroshi Sakuma, Kiyoshi Ishii, Keisuke Aramaki, KyungSung Yun, Hirofumi Kondo,
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Abstract(in English) Al-doped ZnO (AZO) thin films were prepared at room temperature by gas flow sputtering (GFS) method using Al-Zn alloy targets. We evaluated the influence of O_2 gas flow rate and investigated the optical and electrical properties of AZO thin films. From the results, it was found that the deposition rates were obtained above 40nm/min and the resistivity decreased by reducing the flow rate of oxygen gas. We could obtain AZO thin films with the low resistivity as low as 1.2×10-3 Ωcm with transmittance above 90% in the visible region under the oxygen partial pressure of 2.6×10-4 Pa.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Al-doped ZnO film / Transparent conductive film / Sputtered ZnO film / Gas flow sputtering
Paper # EMD2010-13,CPM2010-27,OME2010-32
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Conference Information
Committee EMD
Conference Date 2010/6/18(1days)
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Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Oxygen partial pressure dependences of electrical and optical properties of Al-doped ZnO thin films grown by gas flow sputtering at a low temperature
Sub Title (in English)
Keyword(1) Al-doped ZnO film
Keyword(2) Transparent conductive film
Keyword(3) Sputtered ZnO film
Keyword(4) Gas flow sputtering
1st Author's Name Takayoshi Sudo
1st Author's Affiliation Department of Electrical and Electronic System Engineering, Graduate School of Utsunomiya University()
2nd Author's Name Hirokuni Kondo
2nd Author's Affiliation Department of Electrical and Electronic System Engineering, Graduate School of Utsunomiya University
3rd Author's Name Hiroshi Sakuma
3rd Author's Affiliation Department of Electrical and Electronic System Engineering, Graduate School of Utsunomiya University
4th Author's Name Kiyoshi Ishii
4th Author's Affiliation Department of Electrical and Electronic System Engineering, Graduate School of Utsunomiya University
5th Author's Name Keisuke Aramaki
5th Author's Affiliation Sony Chemical & Information Device Corporation
6th Author's Name KyungSung Yun
6th Author's Affiliation Sony Chemical & Information Device Corporation
7th Author's Name Hirofumi Kondo
7th Author's Affiliation Sony Chemical & Information Device Corporation
Date 2010-06-25
Paper # EMD2010-13,CPM2010-27,OME2010-32
Volume (vol) vol.110
Number (no) 99
Page pp.pp.-
#Pages 5
Date of Issue