Presentation 2010-07-12
An organic nonvolatile memory using space charge polarization of a gate dielectric
Hideyuki MURATA, Heisuke SAKAI, Kudai KONNO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor(OFET)structure using polymethylmethacryrate(PMMA)dispersed with 10-methyl-9-phenylacridinium perchlorate(MPA^+ClO4^-)as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA^+ and ClO_4^- - towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10^<-9> A to 10^<-2> A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 10^7 and the drain current maintained 40% of the initial value after 10^4s.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Organic FET / Organic nonvolatile memory / space charge polarization
Paper # EID2010-5,OME2010-40
Date of Issue

Conference Information
Committee OME
Conference Date 2010/7/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An organic nonvolatile memory using space charge polarization of a gate dielectric
Sub Title (in English)
Keyword(1) Organic FET
Keyword(2) Organic nonvolatile memory
Keyword(3) space charge polarization
1st Author's Name Hideyuki MURATA
1st Author's Affiliation School of Materials Science, Japan Advanced Institute of Science and Technology()
2nd Author's Name Heisuke SAKAI
2nd Author's Affiliation School of Materials Science, Japan Advanced Institute of Science and Technology
3rd Author's Name Kudai KONNO
3rd Author's Affiliation School of Materials Science, Japan Advanced Institute of Science and Technology
Date 2010-07-12
Paper # EID2010-5,OME2010-40
Volume (vol) vol.110
Number (no) 124
Page pp.pp.-
#Pages 4
Date of Issue