Presentation 2010-06-22
Study of pattern area reduction for System LSI with SGT and stacked SGT
Takahiro KODAMA, Shigeyoshi WATANABE,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The pattern area reduction of inverter, NAND, and full adder with SGT and stacked SGT has been 'newly' estimated. Wring SGT and stacked SGT the pattern area can be drastically reduced compared with that of conventional planar transistor, SGT and stacked SGT are promising candidate for reeling high density system LSI.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SGT / stacked SGT / system LSI / design rule / pattern area
Paper # SDM2010-45
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Conference Information
Committee SDM
Conference Date 2010/6/15(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study of pattern area reduction for System LSI with SGT and stacked SGT
Sub Title (in English)
Keyword(1) SGT
Keyword(2) stacked SGT
Keyword(3) system LSI
Keyword(4) design rule
Keyword(5) pattern area
1st Author's Name Takahiro KODAMA
1st Author's Affiliation ()
2nd Author's Name Shigeyoshi WATANABE
2nd Author's Affiliation
Date 2010-06-22
Paper # SDM2010-45
Volume (vol) vol.110
Number (no) 90
Page pp.pp.-
#Pages 6
Date of Issue