Presentation 2010-06-22
70% Read Margin Enhancement by V_
Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke MIYAJI, Shuhei TANAKAMARU, Kentaro HONDA, Shinji MIYANO, Ken TAKEUCHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A V_ mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is proposed. The asymmetric V_ shift is doubled from the conventional scheme without process and area penalty. Measurement results show 24% increase in SNM without write degradation by the asymmetric PG transistor. 70% read margin enhancement is achieved by the proposed scheme.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SRAM / V_ variation / asymmetric pass gate transistor / read margin / self-repair / zero-cost / post-process / local electron injection
Paper # SDM2010-44
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Conference Information
Committee SDM
Conference Date 2010/6/15(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 70% Read Margin Enhancement by V_ Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Sub Title (in English)
Keyword(1) SRAM
Keyword(2) V_ variation
Keyword(3) asymmetric pass gate transistor
Keyword(4) read margin
Keyword(5) self-repair
Keyword(6) zero-cost
Keyword(7) post-process
Keyword(8) local electron injection
1st Author's Name Kousuke MIYAJI
1st Author's Affiliation Institute of Industrial Science, University of Tokyo()
2nd Author's Name Shuhei TANAKAMARU
2nd Author's Affiliation Faculty of of Engineering, University of Tokyo
3rd Author's Name Kentaro HONDA
3rd Author's Affiliation Faculty of of Engineering, University of Tokyo
4th Author's Name Shinji MIYANO
4th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
5th Author's Name Ken TAKEUCHI
5th Author's Affiliation Faculty of of Engineering, University of Tokyo
Date 2010-06-22
Paper # SDM2010-44
Volume (vol) vol.110
Number (no) 90
Page pp.pp.-
#Pages 5
Date of Issue