| Presentation | 2010-06-22 Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms DongHun LEE, Takeshi KANASHIMA, Masanori OKUYAMA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Germanium (Ge) is highlighted as a candidate semiconductor of high speed transistor because of its higher carrier mobility than that of Si. However, it is well known that Ge surface is not passivated easily by wet chemical treatment or by hydrogen treatment unlike Si surface. In this study, we have theoretically simulated the chemical reactivity of various atoms with Ge(100) surface for searching adequate ambient treatment by using molecular orbital method. As the result, we have confirmed that Ge surface is more stable by fluorine and boron than hydrogen. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semi-empirical molecular / Mopac2009 / Ge / Surface treatment / Fluorine treatment |
| Paper # | SDM2010-39 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2010/6/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms |
| Sub Title (in English) | |
| Keyword(1) | Semi-empirical molecular |
| Keyword(2) | Mopac2009 |
| Keyword(3) | Ge |
| Keyword(4) | Surface treatment |
| Keyword(5) | Fluorine treatment |
| 1st Author's Name | DongHun LEE |
| 1st Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | Takeshi KANASHIMA |
| 2nd Author's Affiliation | Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| 3rd Author's Name | Masanori OKUYAMA |
| 3rd Author's Affiliation | Institution for NanoScience Design, Osaka University |
| Date | 2010-06-22 |
| Paper # | SDM2010-39 |
| Volume (vol) | vol.110 |
| Number (no) | 90 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |