Presentation	2010-06-30 Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors(Session 3A : Emerging Device Technology 2) Min Jin LEE, Young CHOI,
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Abstract(in English)	A tunneling field-effect transistor (TFET) is a promising candidate to replace a MOSFET because the subthreshold swing (SS) of the TFET can be reduced below the 60 mV/dec at room temperature. However, the slope of log(I_)-V_ curve of the TFET becomes smaller as gate voltage (V_) increases and eventually becomes smaller than that of the MOSFET when V_ is high. It is problematic in that the drain current (I_) of the TFET cannot exceed that of the MOSFET. In this paper, we investigated the physical origin of the abnormal drain current increase in terms of band-to-band tunneling and drift mechanism..
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	tunneling field-effect transistor / on current / tunnel resistance / channel resistance
Paper #	ED2010-63,SDM2010-64
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Conference Information
Committee	SDM
Conference Date	2010/6/23(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors(Session 3A : Emerging Device Technology 2)
Sub Title (in English)
Keyword(1)	tunneling field-effect transistor
Keyword(2)	on current
Keyword(3)	tunnel resistance
Keyword(4)	channel resistance
1st Author's Name	Min Jin LEE
1st Author's Affiliation	Department of Electronic Engineering, Sogang University()
2nd Author's Name	Young CHOI
2nd Author's Affiliation	Department of Electronic Engineering, Sogang University
Date	2010-06-30
Paper #	ED2010-63,SDM2010-64
Volume (vol)	vol.110
Number (no)	110
Page	pp.pp.-
#Pages	2
Date of Issue