| Presentation | 2010-06-30 A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2) Juhyun Oh, Dae Hwan Chun, Eui Bok Lee, Young Hwan Kim, Chun Keun Kim, Byeong Kwon Ju, Man Young Sung, Yong Tae Kim, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, a new IGBT structure that has oblique trench gate is proposed. This oblique trench gate IGBT(OTIGBT) has higher breakdown voltage and lower on-state voltage drop characteristic than conventional IGBT. The proposed OTIGBT distributes the electric field which is concentrated at the trench edge to the curve of the p-base region. Moreover, this proposed structure can reduce the on-state voltage drop due to the reduced JFET area that is existed in the planar gate IGBT structure. Simulation results indicate the breakdown voltage of the OTIGBT is increased compared to the trench gate IGBT. The on-state voltage drop is reduced than planar gate IGBT which is similar to the on-state voltage drop of trench gate IGBT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Trench IGBT / Breakdown voltage / Electric field distribution |
| Paper # | ED2010-64,SDM2010-65 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2) |
| Sub Title (in English) | |
| Keyword(1) | Trench IGBT |
| Keyword(2) | Breakdown voltage |
| Keyword(3) | Electric field distribution |
| 1st Author's Name | Juhyun Oh |
| 1st Author's Affiliation | School of Electrical Engineering, Korea University() |
| 2nd Author's Name | Dae Hwan Chun |
| 2nd Author's Affiliation | School of Electrical Engineering, Korea University |
| 3rd Author's Name | Eui Bok Lee |
| 3rd Author's Affiliation | School of Electrical Engineering, Korea University:Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology |
| 4th Author's Name | Young Hwan Kim |
| 4th Author's Affiliation | Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology |
| 5th Author's Name | Chun Keun Kim |
| 5th Author's Affiliation | Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology |
| 6th Author's Name | Byeong Kwon Ju |
| 6th Author's Affiliation | Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology |
| 7th Author's Name | Man Young Sung |
| 7th Author's Affiliation | Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology |
| 8th Author's Name | Yong Tae Kim |
| 8th Author's Affiliation | Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology |
| Date | 2010-06-30 |
| Paper # | ED2010-64,SDM2010-65 |
| Volume (vol) | vol.110 |
| Number (no) | 109 |
| Page | pp.pp.- |
| #Pages | 3 |
| Date of Issue | |