Presentation 2010-06-30
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode(Session 3A : Emerging Device Technology 2)
Donghyun Kim, Jaewook Jeong, Yongtaek Hong,
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Abstract(in English) We have made vertical organic field effect transistors which have an additional gate insulation structure on the sidewall of the gate electrodes, to reduce the gate leakage current. The gate insulation structure has been produced by oxidizing the surface of the gate electrode metals. The oxygen plasma has been used to oxidize the gate electrode surface. Associated with other insulation layers on and under the gate electrodes, the gate electrodes can be perfectly separated from the active layers including organic semiconducting materials. The devices with this structure showed basic transistor characteristics with reduced gate leakage current level.
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Keyword(in English) Vertical Organic Field Effect Transistor / Gate Insulation / Organic Static Induction Transistor
Paper # ED2010-59,SDM2010-60
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Committee ED
Conference Date 2010/6/23(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode(Session 3A : Emerging Device Technology 2)
Sub Title (in English)
Keyword(1) Vertical Organic Field Effect Transistor
Keyword(2) Gate Insulation
Keyword(3) Organic Static Induction Transistor
1st Author's Name Donghyun Kim
1st Author's Affiliation Department of Electrical Engineering and Computer Science, Seoul National University()
2nd Author's Name Jaewook Jeong
2nd Author's Affiliation Department of Electrical Engineering and Computer Science, Seoul National University
3rd Author's Name Yongtaek Hong
3rd Author's Affiliation Department of Electrical Engineering and Computer Science, Seoul National University
Date 2010-06-30
Paper # ED2010-59,SDM2010-60
Volume (vol) vol.110
Number (no) 109
Page pp.pp.-
#Pages 2
Date of Issue