Presentation	2009-11-20 Surface properties and deep electronic levels of AlGaN with high Al compositions Katsuya SUGAWARA, Toshiharu KUBO, Hiroyuki TAKETOMI, Hideto MIYAKE, Kazumasa HIRAMATSU, Tamotsu HASHIZUME,
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Abstract(in English)	We have investigated Schottky interface properties and deep levels of Al_xGa_<1-x>N with a wide range of Al composition (0.25N Schottky diodes, the barrier height was found to increase with the Al composition. Using a long time window in the DLTS measurement, we detected deep electron traps with activation energies of 1.0 and 1.3eV, respectively, in Al_<0.25>Ga_<0.75>N and Al_<0.37>Ga_<0.63>N. The trap density was 1x10^<16>cm^<-3> or higher. The activation energies and densities were consistent with those obtained from photo-capacitance result. For the AlGaN with the Al composition of 60%, the capacitance transient at 450K indicated the existence of the deeper electron trap.
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Keyword(in English)	AlGaN / Schottky barrier / Deep level / DLTS / Photo-capacitance
Paper #	ED2009-152,CPM2009-126,LQE2009-131
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Committee	LQE
Conference Date	2009/11/12(1days)
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Paper Information
Registration To	Lasers and Quantum Electronics (LQE)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Surface properties and deep electronic levels of AlGaN with high Al compositions
Sub Title (in English)
Keyword(1)	AlGaN
Keyword(2)	Schottky barrier
Keyword(3)	Deep level
Keyword(4)	DLTS
Keyword(5)	Photo-capacitance
1st Author's Name	Katsuya SUGAWARA
1st Author's Affiliation	Research Center for Integrated Quantum Electronics, Hokkaido University()
2nd Author's Name	Toshiharu KUBO
2nd Author's Affiliation	Research Center for Integrated Quantum Electronics, Hokkaido University
3rd Author's Name	Hiroyuki TAKETOMI
3rd Author's Affiliation	Mie University
4th Author's Name	Hideto MIYAKE
4th Author's Affiliation	Mie University
5th Author's Name	Kazumasa HIRAMATSU
5th Author's Affiliation	Mie University
6th Author's Name	Tamotsu HASHIZUME
6th Author's Affiliation	Research Center for Integrated Quantum Electronics, Hokkaido University
Date	2009-11-20
Paper #	ED2009-152,CPM2009-126,LQE2009-131
Volume (vol)	vol.109
Number (no)	290
Page	pp.pp.-
#Pages	4
Date of Issue