| Presentation | 2009-11-20 Variation of surface properties of Mg-doped GaN subjected to high-temperature annealing Eri OGAWA, Tamotsu HASHIUME, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated chemical, electrical and optical properties of Mg-doped GaN surfaces subjected to a high-temperature anneal. X-ray photoelectron spectroscopy (XPS) showed that Ga2p peaks were clearly detected at the SiO_2/p-GaN surface after the annealing at 1000℃, in addition to the Si and O peaks originating from SiO_2 surface. This indicated that the out-diffusion of Ga atom was induced by high-temperature anneal. After removing the SiO_2 film, we found a significant segregation of Mg atoms near the p-GaN surface with the Mg-doping of 1x10^<19>cm^<-3>. For the as-grown sample with the Mg-doping of 2x10^<19>cm^<-3>, a broad PL peak at around 3.1eV was detected in addition to a weak band-edge emission. After the annealing, a new peak appeared at around 2.8eV, of which the peak position is very close to the so-called blue luminescence (BL) often observed in the highly Mg-doped GaN. On the other hand, different PL spectra were observed for the sample with the Mg-doping of 3x10^<18>cm^<-3> before and after the annealing, indicating that the formation of deep level is dependent on the Mg density and annealing condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Mg-doped GaN / Ga vacancy / Mg accumulation / Deep level / XPS / PL |
| Paper # | ED2009-150,CPM2009-124,LQE2009-129 |
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| Committee | LQE |
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| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Variation of surface properties of Mg-doped GaN subjected to high-temperature annealing |
| Sub Title (in English) | |
| Keyword(1) | Mg-doped GaN |
| Keyword(2) | Ga vacancy |
| Keyword(3) | Mg accumulation |
| Keyword(4) | Deep level |
| Keyword(5) | XPS |
| Keyword(6) | PL |
| 1st Author's Name | Eri OGAWA |
| 1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics, Hokkaido University:CREST-JST() |
| 2nd Author's Name | Tamotsu HASHIUME |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics, Hokkaido University:CREST-JST |
| Date | 2009-11-20 |
| Paper # | ED2009-150,CPM2009-124,LQE2009-129 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
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