| Presentation | 2009-11-19 Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices : Development from emitters into solar cells Kazuhide KUSAKABE, Yoshihiro ISHITANI, Akihiko YOSHIKAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For a development of photonic devices utilizing InN properties, it is necessary to control (1) the p-type conductivity in InN and In-rich InGaN, and (2) the structural perfection of quantum well structures. A new development of InN-based novel photonic detectors is proposed, based on our achievements of the p-type conductive control and the 1-monolayer-thick InN quantum wells. Especially, the InN/InGaN/GaN asymmetric quantum well structures, which have been recently investigated, are expected for application not only to emitters suppressing QCSE, but also to third generation ultrahigh-efficiency solar cells, and to infrared photo-detectors. In this article, a design concept and a feature of the photonic detectors are presented. When the InGaN tandem solar cells including 1ML-InN QWs as a photo-sensitizer are composed, theoretical evaluation shows that the maximum conversion efficiency reaches 56% for the 6 tandem structure (further 65% under 250 suns). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 1ML-InN / InGaN alloys / Solar cell / Photo-sensitization |
| Paper # | ED2009-145,CPM2009-119,LQE2009-124 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices : Development from emitters into solar cells |
| Sub Title (in English) | |
| Keyword(1) | 1ML-InN |
| Keyword(2) | InGaN alloys |
| Keyword(3) | Solar cell |
| Keyword(4) | Photo-sensitization |
| 1st Author's Name | Kazuhide KUSAKABE |
| 1st Author's Affiliation | Department of Artificial Systems, Graduate School of Engineering, Chiba University() |
| 2nd Author's Name | Yoshihiro ISHITANI |
| 2nd Author's Affiliation | Department of Artificial Systems, Graduate School of Engineering, Chiba University |
| 3rd Author's Name | Akihiko YOSHIKAWA |
| 3rd Author's Affiliation | Department of Artificial Systems, Graduate School of Engineering, Chiba University |
| Date | 2009-11-19 |
| Paper # | ED2009-145,CPM2009-119,LQE2009-124 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |