Presentation 2009-11-19
Ultraviolet AlGaN based multiple-quantum-well laser diodes
Harumasa YOSHIDA, Masakazu KUWABARA, Yoji YAMASHITA, Yasufumi TAKAGI, Kazuya UCHIYAMA, Hirofumi KAN,
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Abstract(in English) We have demonstrated the room-temperature operations of AlGaN based multi-quantum-well (MQW) laser diodes under pulsed-current mode. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low dislocation density AlGaN films. The AlGaN MQW laser diodes lased at a peak wavelength down to 336nm far beyond the GaN band gap. The results on the AlGaN based laser diodes grown on the high quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelength.
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Keyword(in English) GaN / AlGaN / ultraviolet / laser diodes / semiconductor lasers
Paper # ED2009-141,CPM2009-115,LQE2009-120
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Committee LQE
Conference Date 2009/11/12(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ultraviolet AlGaN based multiple-quantum-well laser diodes
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) ultraviolet
Keyword(4) laser diodes
Keyword(5) semiconductor lasers
1st Author's Name Harumasa YOSHIDA
1st Author's Affiliation HAMAMATSU PHOTONICS K.K.()
2nd Author's Name Masakazu KUWABARA
2nd Author's Affiliation HAMAMATSU PHOTONICS K.K.
3rd Author's Name Yoji YAMASHITA
3rd Author's Affiliation HAMAMATSU PHOTONICS K.K.
4th Author's Name Yasufumi TAKAGI
4th Author's Affiliation HAMAMATSU PHOTONICS K.K.
5th Author's Name Kazuya UCHIYAMA
5th Author's Affiliation HAMAMATSU PHOTONICS K.K.
6th Author's Name Hirofumi KAN
6th Author's Affiliation HAMAMATSU PHOTONICS K.K.
Date 2009-11-19
Paper # ED2009-141,CPM2009-115,LQE2009-120
Volume (vol) vol.109
Number (no) 290
Page pp.pp.-
#Pages 4
Date of Issue