| Presentation | 2009-11-19 Electrical and optical properties of polycrystalline Ga_xIn_<1-x>As thin films Yoshichika TORII, Takuya OKUZAKO, Shin-ya TAKAMI, Yasutomo KAJIKAWA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Polycrystalline Ga_xIn_<1-x>As films having Ga contents of x=0-1 and the thickness of about 1μm were grown on glass substrates at 240 and 350℃ by molecular-beam deposition. Hall-effect measurements at 100-390K revealed that the electron concentration of the samples having Ga contents of x≦0.30 was almost independent of the measurement temperature, while that of the samples having x≧0.36 decreased with decreasing temperature. The electron mobility of the samples having Ga contents of x≦0.21 was almost independent of the measurement temperature, while that of the samples having x≧0.30 decreased with decreasing temperature. The temperature dependence of electron concentration is explained assuming the existence of two donor levels. The temperature dependence of electron mobility is explained in terms of thermionic electron emission over the grain-boundary barriers. In addition, optical transmission measurements were performed in order to investigate the absorption coefficient and the optical band gap. The dependence of the optical band gap on the Ga content can be explained by taking into account the Burstein-Moss shift for samples having x≦0.44, and the quantum confinement effect due to the grain-boundary barriers for the samples having x≦0.30. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor alloy polycrystal / Hall-effect measurement / grain-boundary potential barrier / optical band gap / Burstein-Moss shift / quantum confinement effect |
| Paper # | ED2009-139,CPM2009-113,LQE2009-118 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical and optical properties of polycrystalline Ga_xIn_<1-x>As thin films |
| Sub Title (in English) | |
| Keyword(1) | semiconductor alloy polycrystal |
| Keyword(2) | Hall-effect measurement |
| Keyword(3) | grain-boundary potential barrier |
| Keyword(4) | optical band gap |
| Keyword(5) | Burstein-Moss shift |
| Keyword(6) | quantum confinement effect |
| 1st Author's Name | Yoshichika TORII |
| 1st Author's Affiliation | Interdisciplinary Graduete School of Science and Engineering, Shimane University() |
| 2nd Author's Name | Takuya OKUZAKO |
| 2nd Author's Affiliation | Interdisciplinary Graduete School of Science and Engineering, Shimane University |
| 3rd Author's Name | Shin-ya TAKAMI |
| 3rd Author's Affiliation | Interdisciplinary Graduete School of Science and Engineering, Shimane University |
| 4th Author's Name | Yasutomo KAJIKAWA |
| 4th Author's Affiliation | Interdisciplinary Graduete School of Science and Engineering, Shimane University |
| Date | 2009-11-19 |
| Paper # | ED2009-139,CPM2009-113,LQE2009-118 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |