Presentation 2009-11-19
Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Semiconductors Based on the First Principles Calculations
Kenji SHIRAISHI, Jun-ichi IWATA, Teruaki OBATA, Atsushi OSHIYAMA,
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Abstract(in English) In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in the covalent radius between In and N atoms. We consider atomic and electronic structures of N mono-vacancies (V_N) in InGaN in detail by the first principles calculations. We find that the second nearest neighbor In-In interactions, which are not important in conventional semiconductors such as Si and InAs, are as crucial the nearest neighbor In-N interaction in In-related nitride semiconductors. Moreover, we clearly show that the strong second nearest neighbor In-In interactions in InN are the physical origin of the unusually narrow band gap of InN
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Keyword(in English) In-containing nitride semiconductors / Band structures / Theory / First-Principles Calculations / Iconicity / Covalency
Paper # ED2009-138,CPM2009-112,LQE2009-117
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Committee LQE
Conference Date 2009/11/12(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Semiconductors Based on the First Principles Calculations
Sub Title (in English)
Keyword(1) In-containing nitride semiconductors
Keyword(2) Band structures
Keyword(3) Theory
Keyword(4) First-Principles Calculations
Keyword(5) Iconicity
Keyword(6) Covalency
1st Author's Name Kenji SHIRAISHI
1st Author's Affiliation Center for Computational Sciences, University of Tsukuba:Graduate School for Pure and Applied Sciences, University of Tsukuba:CREST, Japan Science and Technology Agency()
2nd Author's Name Jun-ichi IWATA
2nd Author's Affiliation Center for Computational Sciences, University of Tsukuba:CREST, Japan Science and Technology Agency
3rd Author's Name Teruaki OBATA
3rd Author's Affiliation Graduate School for Pure and Applied Sciences, University of Tsukuba
4th Author's Name Atsushi OSHIYAMA
4th Author's Affiliation Graduate School of Engineering, University of Tokyo:CREST, Japan Science and Technology Agency
Date 2009-11-19
Paper # ED2009-138,CPM2009-112,LQE2009-117
Volume (vol) vol.109
Number (no) 290
Page pp.pp.-
#Pages 4
Date of Issue