Presentation 2009-11-19
Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates
Atsushi KOBAYASHI, Kazuma SHIMOMOTO, Kohei UENO, Tomofumi KAJIMA, Jitsuo OHTA, Hiroshi FUJIOKA, Masaharu OSHIMA,
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Abstract(in English) ZnO has been regarded as an ideal substrate for epitaxial growth of nonpolar group III nitride films because its structural properties are quite similar to those of GaN. However, ZnO has not been used as the substrate due to its chemical instability under the conventional growth conditions of metal-organic vapor phase epitaxy. We have recently found that the use of "pulsed-laser-deposition room-temperature growth technique" enables us to fabricate abrupt nonplolar interfaces, and to solve the instability of ZnO. In this paper, we report that there exist anisotropic in-plane strains in m-plane InGaN films grown on ZnO substrates, which influence the optical polarization properties.
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Keyword(in English) Group-III nitrides / nonpolar / ZnO / pulsed excitation deposition / low-temperature growth / optical property
Paper # ED2009-137,CPM2009-111,LQE2009-116
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Committee LQE
Conference Date 2009/11/12(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates
Sub Title (in English)
Keyword(1) Group-III nitrides
Keyword(2) nonpolar
Keyword(3) ZnO
Keyword(4) pulsed excitation deposition
Keyword(5) low-temperature growth
Keyword(6) optical property
1st Author's Name Atsushi KOBAYASHI
1st Author's Affiliation Department of Applied Chemistry, The University of Tokyo()
2nd Author's Name Kazuma SHIMOMOTO
2nd Author's Affiliation Institute of Industrial Science, The University of Tokyo
3rd Author's Name Kohei UENO
3rd Author's Affiliation Institute of Industrial Science, The University of Tokyo
4th Author's Name Tomofumi KAJIMA
4th Author's Affiliation Department of Applied Chemistry, The University of Tokyo
5th Author's Name Jitsuo OHTA
5th Author's Affiliation Institute of Industrial Science, The University of Tokyo
6th Author's Name Hiroshi FUJIOKA
6th Author's Affiliation Institute of Industrial Science, The University of Tokyo:CREST, Japan Science and Technology Agency
7th Author's Name Masaharu OSHIMA
7th Author's Affiliation Department of Applied Chemistry, The University of Tokyo:CREST, Japan Science and Technology Agency
Date 2009-11-19
Paper # ED2009-137,CPM2009-111,LQE2009-116
Volume (vol) vol.109
Number (no) 290
Page pp.pp.-
#Pages 4
Date of Issue