Presentation | 2009-11-19 Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates Atsushi KOBAYASHI, Kazuma SHIMOMOTO, Kohei UENO, Tomofumi KAJIMA, Jitsuo OHTA, Hiroshi FUJIOKA, Masaharu OSHIMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ZnO has been regarded as an ideal substrate for epitaxial growth of nonpolar group III nitride films because its structural properties are quite similar to those of GaN. However, ZnO has not been used as the substrate due to its chemical instability under the conventional growth conditions of metal-organic vapor phase epitaxy. We have recently found that the use of "pulsed-laser-deposition room-temperature growth technique" enables us to fabricate abrupt nonplolar interfaces, and to solve the instability of ZnO. In this paper, we report that there exist anisotropic in-plane strains in m-plane InGaN films grown on ZnO substrates, which influence the optical polarization properties. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Group-III nitrides / nonpolar / ZnO / pulsed excitation deposition / low-temperature growth / optical property |
Paper # | ED2009-137,CPM2009-111,LQE2009-116 |
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Committee | LQE |
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Conference Date | 2009/11/12(1days) |
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Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates |
Sub Title (in English) | |
Keyword(1) | Group-III nitrides |
Keyword(2) | nonpolar |
Keyword(3) | ZnO |
Keyword(4) | pulsed excitation deposition |
Keyword(5) | low-temperature growth |
Keyword(6) | optical property |
1st Author's Name | Atsushi KOBAYASHI |
1st Author's Affiliation | Department of Applied Chemistry, The University of Tokyo() |
2nd Author's Name | Kazuma SHIMOMOTO |
2nd Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
3rd Author's Name | Kohei UENO |
3rd Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
4th Author's Name | Tomofumi KAJIMA |
4th Author's Affiliation | Department of Applied Chemistry, The University of Tokyo |
5th Author's Name | Jitsuo OHTA |
5th Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
6th Author's Name | Hiroshi FUJIOKA |
6th Author's Affiliation | Institute of Industrial Science, The University of Tokyo:CREST, Japan Science and Technology Agency |
7th Author's Name | Masaharu OSHIMA |
7th Author's Affiliation | Department of Applied Chemistry, The University of Tokyo:CREST, Japan Science and Technology Agency |
Date | 2009-11-19 |
Paper # | ED2009-137,CPM2009-111,LQE2009-116 |
Volume (vol) | vol.109 |
Number (no) | 290 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |