| Presentation | 2009-11-19 Mapping of luminous intensity saturation in InGaN/GaN SQW studied by scanning near-field optical microscopy Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The spatially resolved photoluminescence mappings under the various carrier densities are performed to clarify the phenomena of PL intensity saturation in blue and green emitting InGaN/GaN single quantum wells (SQWs) on epitaxially laterally overgrown GaN template at room temperature by a scanning near-field microscopy (SNOM). It has been found that there is little saturation of PL intensity when the carrier density is increased in blue emitting QW. On the other hand, the PL intensity is saturated in green emitting QW. In the blue emitting QW, the SNOM data show that while the localization states are filled by highly photogenerated carriers and/or excitons and that are diffused from localization states to delocalization ones, the capture probability to nonradiative recombination centers (NRCs) are suppressed because NRCs are surrounded by high potential barrier. However, the carrier and/or excitons are captured easily into the NRCs because they are closely correlated with lower energy band probably due to In-rich clustering in the green emitting QW and the migration from the high energy band to low energy band is enhanced under the highly photoexcited condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SNOM / InGaN SQW / Droop |
| Paper # | ED2009-136,CPM2009-110,LQE2009-115 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mapping of luminous intensity saturation in InGaN/GaN SQW studied by scanning near-field optical microscopy |
| Sub Title (in English) | |
| Keyword(1) | SNOM |
| Keyword(2) | InGaN SQW |
| Keyword(3) | Droop |
| 1st Author's Name | Akira Hashiya |
| 1st Author's Affiliation | Kyoto University() |
| 2nd Author's Name | Akio Kaneta |
| 2nd Author's Affiliation | Kyoto University |
| 3rd Author's Name | Mitsuru Funato |
| 3rd Author's Affiliation | Kyoto University |
| 4th Author's Name | Yoichi Kawakami |
| 4th Author's Affiliation | Kyoto University |
| Date | 2009-11-19 |
| Paper # | ED2009-136,CPM2009-110,LQE2009-115 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |