| Presentation | 2009-11-19 High spatial resolution PL mapping of {11-22} InGaN quantum wells by a scanning near field optical microscope Akio KANETA, Masaya UEDA, Mitsuru FUNATO, Yoichi KAWAKAMI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Spatially resolved photoluminescence mapping was performed for c plane and {11-22} InGaN/GaN quantum wells (QWs) by a scanning near field optical microscope, and differences of recombination dynamics between them were investigated at cryogenic temperature. For the c plane QW, despite the cryogenic temperature, the PL intensity map consists of island like structure where the strong PL intensity domains correspond to the lower emission energy bands. Moreover, the PL spectra are composed of several emission peaks, and the shape of spectra is different in each position. These results indicate that the carriers/excitons are diffused to localization centers and recombine radiatively. On the other hand, such PL intensity fluctuations and position dependence of PL spectra have not been observed in the {11-22} QW. These findings strongly suggest that the density of localization centers in the {11-22} QW is much higher than that in the c plane QW. Additionally, the carrier diffusion length of the {11-22} QW is much shorter than that of the c plane QW. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | c plane InGaN QW / {11-22}InGaN QW / scanning near field optical microscope / localization center / diffusion length |
| Paper # | ED2009-135,CPM2009-109,LQE2009-114 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High spatial resolution PL mapping of {11-22} InGaN quantum wells by a scanning near field optical microscope |
| Sub Title (in English) | |
| Keyword(1) | c plane InGaN QW |
| Keyword(2) | {11-22}InGaN QW |
| Keyword(3) | scanning near field optical microscope |
| Keyword(4) | localization center |
| Keyword(5) | diffusion length |
| 1st Author's Name | Akio KANETA |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Masaya UEDA |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Mitsuru FUNATO |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Yoichi KAWAKAMI |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2009-11-19 |
| Paper # | ED2009-135,CPM2009-109,LQE2009-114 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |