Presentation 2009-11-19
Exciton emission mechanism in AlN epitaxial films
Takeyoshi ONUMA, Kouji HAZU, Takayuki SOTA, Akira UEDONO, Shigefusa F. CHICHIBU,
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Abstract(in English) Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al_2O_3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (2×10^8cm^<-2>) AlN film. From the energy difference between the ground- and the first-excited states, the hydrogenic A-exciton binding energy in the compressively strained (Δa/a≅-1.68%) AlN was estimated to be 51meV.
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Keyword(in English) AlN / Polarization / Reflectance / Cathodoluminescence
Paper # ED2009-134,CPM2009-108,LQE2009-113
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Committee LQE
Conference Date 2009/11/12(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Exciton emission mechanism in AlN epitaxial films
Sub Title (in English)
Keyword(1) AlN
Keyword(2) Polarization
Keyword(3) Reflectance
Keyword(4) Cathodoluminescence
1st Author's Name Takeyoshi ONUMA
1st Author's Affiliation Institute of Multidisciplinary Research for Advanced Materials, Tohoku University()
2nd Author's Name Kouji HAZU
2nd Author's Affiliation Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
3rd Author's Name Takayuki SOTA
3rd Author's Affiliation Department of Electrical Engineering and Bioscience, Waseda University
4th Author's Name Akira UEDONO
4th Author's Affiliation Institute of Applied Physics, University of Tsukuba
5th Author's Name Shigefusa F. CHICHIBU
5th Author's Affiliation Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Date 2009-11-19
Paper # ED2009-134,CPM2009-108,LQE2009-113
Volume (vol) vol.109
Number (no) 290
Page pp.pp.-
#Pages 4
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