| Presentation | 2009-11-19 Proposal of new growth method for high-quality InN and development on growth of InGaN Tomohiro YAMAGUCHI, Yasushi NANISHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | New radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) method, named droplet elimination by radical-beam irradiation (DERI), is proposed for the growth of InN. This method is composed of two series of growth processes: (1) droplet formation process and (2) droplet elimination process. In droplets are formed on a surface by either InN growth under an In-rich condition or simple In irradiation in droplet formation process. These droplets are eliminated and transformed to InN epitaxially on the underlayer in droplet elimination process, which is consisting of nitrogen radical beam irradiation. This method supplies simple and reproducible growth of a high-quality InN film, since DERI method can be monitored in situ by reflection high-energy electron diffraction (RHEED) intensity variation. This DERI method is also applied to InGaN growth. The results indicate that Ga preferably or selectively captures into InGaN layer and In, which is forced to sweep away to the surface, is transformed to InN on top of InGaN by droplet elimination process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Molecular Beam Epitaxy (MBE) / InN / InGaN |
| Paper # | ED2009-133,CPM2009-107,LQE2009-112 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Proposal of new growth method for high-quality InN and development on growth of InGaN |
| Sub Title (in English) | |
| Keyword(1) | Molecular Beam Epitaxy (MBE) |
| Keyword(2) | InN |
| Keyword(3) | InGaN |
| 1st Author's Name | Tomohiro YAMAGUCHI |
| 1st Author's Affiliation | Res. Org. of Sci. & Eng., Ritsumeikan University() |
| 2nd Author's Name | Yasushi NANISHI |
| 2nd Author's Affiliation | Dept. of Photonics, Ritsumeikan University:WCU Program, Seoul National University |
| Date | 2009-11-19 |
| Paper # | ED2009-133,CPM2009-107,LQE2009-112 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |