Presentation 2009-11-19
High quality InN crystal growth by RF-MBE : Growth of position-controlled InN nanocolumns
Tsutomu ARAKI, Tomohiro YAMAGUCHI, Masamitsu KANEKO, Yasushi NANISHI,
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Abstract(in English) Position controlled InN nanocolumns were successfully grown by ECR-MBE and RF-MBE on hole-patterned GaN template fabricated by focused ion beam (FIB). Dependences of morphological changes in InN nanocolumn on growth temperature, hole size and V/III ratio were investigated. It is found that growth with a higher V/III ratio and a larger hole size resulted in the multiple formation of InN nanocolumns in one hole. By varying the hole density on the GaN template, we succeeded to change the density of InN nanocolumn by one order of magnitude from about 9/μm^2 to 100/μm^2. InN nanocolumn showed luminescence with peak energy of 0.74eV by cathodoluminescence measurement.
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Keyword(in English) InN / nano-column / crystal growth / MBE
Paper # ED2009-132,CPM2009-106,LQE2009-111
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Committee LQE
Conference Date 2009/11/12(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High quality InN crystal growth by RF-MBE : Growth of position-controlled InN nanocolumns
Sub Title (in English)
Keyword(1) InN
Keyword(2) nano-column
Keyword(3) crystal growth
Keyword(4) MBE
1st Author's Name Tsutomu ARAKI
1st Author's Affiliation Dept. of Photonics, Ritsumeikan University()
2nd Author's Name Tomohiro YAMAGUCHI
2nd Author's Affiliation Res. Org. of Sci. & Eng., Ritsumeikan University
3rd Author's Name Masamitsu KANEKO
3rd Author's Affiliation Res. Org. of Sci. & Eng., Ritsumeikan University
4th Author's Name Yasushi NANISHI
4th Author's Affiliation Dept. of Photonics, Ritsumeikan University:WCU Program, Seoul National University
Date 2009-11-19
Paper # ED2009-132,CPM2009-106,LQE2009-111
Volume (vol) vol.109
Number (no) 290
Page pp.pp.-
#Pages 6
Date of Issue