| Presentation | 2009-11-19 MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique Jumpei KAMIMURA, Katsumi KISHINO, Akihiko Kikuchi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrated selective-area growth of InN on Sapphire (0001) substrates by use of molybdenum-mask selective area growth (SAG) of rf-plasma-assisted molecular beam epitaxy (RF-MBE). The well-aligned selective-area grown InN crystals, which have a diameter of 1.0μm, a height of 1.5μm, and a pitch of 1.0μm, showed high crystalline-quality with the room-temperature (RT) photoluminescence (PL) FWHM of 54meV and the PL peak energy of 0.63eV. This suggests that we have grown high-quality InN crystals directly on sapphire substrates without using GaN templates or any buffer layers and also catalyst. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InN / Selective-Area Growth / Molecular Beam Epitaxy / Sapphire (0001) substrate |
| Paper # | ED2009-131,CPM2009-105,LQE2009-110 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique |
| Sub Title (in English) | |
| Keyword(1) | InN |
| Keyword(2) | Selective-Area Growth |
| Keyword(3) | Molecular Beam Epitaxy |
| Keyword(4) | Sapphire (0001) substrate |
| 1st Author's Name | Jumpei KAMIMURA |
| 1st Author's Affiliation | Faculty of Science and Technology, Sophia University:CREST, Japan Science and Technology Agency() |
| 2nd Author's Name | Katsumi KISHINO |
| 2nd Author's Affiliation | Faculty of Science and Technology, Sophia University:Sophia Nanotechnology Research Center:CREST, Japan Science and Technology Agency |
| 3rd Author's Name | Akihiko Kikuchi |
| 3rd Author's Affiliation | Faculty of Science and Technology, Sophia University:Sophia Nanotechnology Research Center:CREST, Japan Science and Technology Agency |
| Date | 2009-11-19 |
| Paper # | ED2009-131,CPM2009-105,LQE2009-110 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |