| Presentation | 2009-11-19 HVPE Growth of {11-22} GaN Crystals on m-plane Sapphire Substrates Hitoshi SASAKI, Hiroki GOTO, Akira USUI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | {11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN/HT-AlN double layer structure is used as a buffer layer between the 2-inch-diameter sapphire substrates and 25-μm-thick HVPE-GaN layers. FWHM of GaN {11-22} X-ray rocking curve (XRC) measured with the X-ray reflection along GaN m-axis is wider than that with the X-ray reflection across the m-axis. It is shown that FWHM is improved by using m-plane sapphire substrates misoriented toward the GaN c-axis. Selective area re-growth of GaN layers using the SiO_2 mask stripes parallel to the GaN m-axis also suppresses the FWHM broadening along the m-axis. Furthermore, 700-μm-thick freestanding {11-22} GaN crystal is demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Crystal Growth / HVPE / Semi-polar Plane / {11-22} / Sapphire Substrate |
| Paper # | ED2009-129,CPM2009-103,LQE2009-108 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | HVPE Growth of {11-22} GaN Crystals on m-plane Sapphire Substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Crystal Growth |
| Keyword(3) | HVPE |
| Keyword(4) | Semi-polar Plane |
| Keyword(5) | {11-22} |
| Keyword(6) | Sapphire Substrate |
| 1st Author's Name | Hitoshi SASAKI |
| 1st Author's Affiliation | Nitride Semiconductor Department, R & D Division, Furukawa Co., Ltd.() |
| 2nd Author's Name | Hiroki GOTO |
| 2nd Author's Affiliation | Nitride Semiconductor Department, R & D Division, Furukawa Co., Ltd. |
| 3rd Author's Name | Akira USUI |
| 3rd Author's Affiliation | Nitride Semiconductor Department, R & D Division, Furukawa Co., Ltd. |
| Date | 2009-11-19 |
| Paper # | ED2009-129,CPM2009-103,LQE2009-108 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |