| Presentation | 2009-11-19 GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer Kohei HARA, Yoshiki NAOI, Shiro SAKAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two step growth of GaN is performed, and the metal which is selectively sandwiched into GaN is formed. A GaN downward is etched away when Ta is selectively there. The mechanism is that TaN is formed at high temperature and separate into two, Ta and N2 gas. TaN is again formed, and the rest is in the same way. The usefulness of this technique is the use of the reflectance layer for the UV-LED which emits shorter than 370nm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Tantalum (Ta) / etching |
| Paper # | ED2009-128,CPM2009-102,LQE2009-107 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/11/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Tantalum (Ta) |
| Keyword(3) | etching |
| 1st Author's Name | Kohei HARA |
| 1st Author's Affiliation | Faculty of Engineering, The University of Tokushima() |
| 2nd Author's Name | Yoshiki NAOI |
| 2nd Author's Affiliation | Faculty of Engineering, The University of Tokushima |
| 3rd Author's Name | Shiro SAKAI |
| 3rd Author's Affiliation | Faculty of Engineering, The University of Tokushima |
| Date | 2009-11-19 |
| Paper # | ED2009-128,CPM2009-102,LQE2009-107 |
| Volume (vol) | vol.109 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |