Presentation 2009-10-22
S-band Internally Matched Class-E GaN HEMT Amplifier
Yukio TAKAHASHI, Takashi HIGUCHI, Kazutoshi MASUDA,
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Abstract(in English) A Class-E amplifier is designed at S-band with our inhouse developed GaN HEMTs. The Class-E amplifier generally described by the time-domain concept can achieve high efficiency performance through switching operation. We have designed the amplifier using a frequency-domain concept instead and integrated all the input/output matching circuitry into one single package. It can achieve an output power of 100W and a drain efficiency of 72.3% at 2.6GHz and the drain efficiency is more than 70% between 2.55GHz and 2.85GHz under pulse operation with an applied drain voltage of 22V. With an applied 18V drain voltage, it can realize a maximum drain efficiency of 78.1% and an output power of 60W at 2.7GHz and the drain efficiency is more than 70% between 2.5GHz and 2.9GHz.
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Keyword(in English) Microwave / Amplifiers / Class-E / S-band / Internally matched / high efficiency / high power
Paper # EMCJ2009-50,MW2009-99
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Conference Information
Committee EMCJ
Conference Date 2009/10/15(1days)
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Paper Information
Registration To Electromagnetic Compatibility (EMCJ)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) S-band Internally Matched Class-E GaN HEMT Amplifier
Sub Title (in English)
Keyword(1) Microwave
Keyword(2) Amplifiers
Keyword(3) Class-E
Keyword(4) S-band
Keyword(5) Internally matched
Keyword(6) high efficiency
Keyword(7) high power
1st Author's Name Yukio TAKAHASHI
1st Author's Affiliation Toshiba Corporation Social Infrastructure Systems Company Komukai Operations()
2nd Author's Name Takashi HIGUCHI
2nd Author's Affiliation Toshiba Corporation Corporate Manufacturing Engineering Center
3rd Author's Name Kazutoshi MASUDA
3rd Author's Affiliation Toshiba Corporation Social Infrastructure Systems Company Komukai Operations
Date 2009-10-22
Paper # EMCJ2009-50,MW2009-99
Volume (vol) vol.109
Number (no) 241
Page pp.pp.-
#Pages 4
Date of Issue