Presentation | 2009-10-09 Stress assisted magnetization reversal of a spin valve structural perpendicular GMR multi-layer Kazuya JIMBO, Naoya SAITO, Shigeki NAKAGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A Stress Assisted Magnetization Reversal (SAMR) method has been demonstrated in order to reduce a power consumption during magnetization reversal process in a perpendicular magenetoresistive random access memory. In this study, a giant magnetoresistive multilayer of Cu(15nm)/Terfenol-D(10nm)/Cu(3nm)/TbFeCo(30nm)/Cu(15nm) were prepared. By using both of an upper and a bottom antioxide layers of the Cu, the multilayer kept its perpendicular magnetization after baked at 100℃ for 2 minutes. Perpendicular component of magnetization reversal in the GMR multilayer were observed during SAMR process by anomalous Hall effect. As a result, the magnetization of a free layer is shifted from perpendicular to in-plane under a stress application of 279MPa. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | p-MRAM / Stress assisted magnetization reversal / SAMR / inverse magnetostriction effect / Terfenol-D / GMR |
Paper # | MR2009-27 |
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Conference Information | |
Committee | MR |
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Conference Date | 2009/10/1(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Magnetic Recording (MR) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Stress assisted magnetization reversal of a spin valve structural perpendicular GMR multi-layer |
Sub Title (in English) | |
Keyword(1) | p-MRAM |
Keyword(2) | Stress assisted magnetization reversal |
Keyword(3) | SAMR |
Keyword(4) | inverse magnetostriction effect |
Keyword(5) | Terfenol-D |
Keyword(6) | GMR |
1st Author's Name | Kazuya JIMBO |
1st Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology() |
2nd Author's Name | Naoya SAITO |
2nd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
3rd Author's Name | Shigeki NAKAGAWA |
3rd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
Date | 2009-10-09 |
Paper # | MR2009-27 |
Volume (vol) | vol.109 |
Number (no) | 222 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |