| Presentation | 2009-11-20 Emitter-metal-related degradation in InP-based HBTs and its suppression by introducing refractory metal Yoshino K. FUKAI, Kenji KURISHIMA, Norihide KASHIO, Minoru IDA, Shoji YAMAHATA, Takatomo ENOKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Bias-temperature accelerated tests under high temperatures and high current densities of up to 5mA/μm^2 were conducted for InP HBTs with conventional emitter electrodes of Ti/Pt/Au, and with refractory metal emitters of Ti/Mo-Ti/Pt/Au, Ti/W-Ti/Pt/Au, or W-Ti/Pt/Au. Severe damage and disruption of uniformity of the atomic composition in the emitter contact layer were observed due to diffusion of Ti and Au with conventional emitter, whereas suppression of those degradations with refractory emitter. The increase in emitter resistance has the same activation energy for all types of emitter electrode, which are 2.0 and 1.65eV for J_c of 2 and 5mA/μm^2, respectively. The lifetime was one order larger for HBTs with refractory metal than for HBTs with conventional metal at the same junction temperature. The advantages of refractory metal electrode were confirmed, especially for operation at high current densities. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP HBT / emitter metal / refractory metal / emitter resistance |
| Paper # | R2009-43 |
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| Committee | R |
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| Conference Date | 2009/11/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emitter-metal-related degradation in InP-based HBTs and its suppression by introducing refractory metal |
| Sub Title (in English) | |
| Keyword(1) | InP HBT |
| Keyword(2) | emitter metal |
| Keyword(3) | refractory metal |
| Keyword(4) | emitter resistance |
| 1st Author's Name | Yoshino K. FUKAI |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Kenji KURISHIMA |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 3rd Author's Name | Norihide KASHIO |
| 3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 4th Author's Name | Minoru IDA |
| 4th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 5th Author's Name | Shoji YAMAHATA |
| 5th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 6th Author's Name | Takatomo ENOKI |
| 6th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| Date | 2009-11-20 |
| Paper # | R2009-43 |
| Volume (vol) | vol.109 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |