| Presentation | 2009-11-13 Reduction of Read Gap Length by Thin Exchange Bias Layer Chiharu MITSUMATA, Akimasa SAKUMA, Kazuaki FUKAMICHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For the material design of thin exchange bias layer to reduce the read gap length, the exchange bias between the ferromagnetic (FM) and antiferromagnetic (AFM) bilayer was investigated within the framework of the classical Heisenberg model. The dependence of the exchange bias on the AFM layer thickness was also calculated by using the Landau-Lifshitz-Gilbert equation. The triple-Q (3Q), T1 and AF-I spin structures are obtained in the disordered γ-phase, ordered L1_2- and L1_0-type lattices, respectively. The exchange bias is caused by the formation of the interfacial domain wall in the AFM layer, and the critical thickness d_c of AFM layer is dominated by the varied spin structures. Consequently, the relation of the critical thickness can be represented as √<3>d^<3Q>_c=√<2>d^ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | exchange bias / antiferromagnetic / critical thickness / magnetic domain wall / spin structure |
| Paper # | MR2009-33 |
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| Conference Information | |
| Committee | MR |
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| Conference Date | 2009/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Magnetic Recording (MR) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of Read Gap Length by Thin Exchange Bias Layer |
| Sub Title (in English) | |
| Keyword(1) | exchange bias |
| Keyword(2) | antiferromagnetic |
| Keyword(3) | critical thickness |
| Keyword(4) | magnetic domain wall |
| Keyword(5) | spin structure |
| 1st Author's Name | Chiharu MITSUMATA |
| 1st Author's Affiliation | Production System Laboratory, Hitachi Metals() |
| 2nd Author's Name | Akimasa SAKUMA |
| 2nd Author's Affiliation | Dpt. of Applied Physics, Graduate School of Engineering, Tohoku Univ. |
| 3rd Author's Name | Kazuaki FUKAMICHI |
| 3rd Author's Affiliation | Institute of Multidisciplinary Research for Advanced Materials, Tohoku Univ. |
| Date | 2009-11-13 |
| Paper # | MR2009-33 |
| Volume (vol) | vol.109 |
| Number (no) | 282 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |