Presentation | 2009-11-30 Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation Kiyohito SAWADA, Safumi SUZUKI, Atsushi TERANISHI, Masato SHIRAISHI, Masahiro ASADA, Hiroki SUGIYAMA, Haruki YOKOYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We demonstrate fundamental oscillations at around 900GHz with low bias voltages in resonant tunneling diodes (RTDs) having spike-doping structures. The voltages at the current peak were 0.67 and 0.4V for RTDs with the spike doping concentrations of 2x10^<18> and 1x10^<19>cm^<-3>, respectively, while 0.94V without spike doping. The peak current densities were around 18mA/μm^2, almost unchanged with the spike doping. The highest oscillation frequency in this study was 898GHz at 0.53-μm^2-mesa area for the RTD with spike doping concentration of 2x10^<18>cm^<-3>. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | resonant tunneling diode / THz oscillators / spike doping |
Paper # | ED2009-166 |
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Conference Information | |
Committee | ED |
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Conference Date | 2009/11/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation |
Sub Title (in English) | |
Keyword(1) | resonant tunneling diode |
Keyword(2) | THz oscillators |
Keyword(3) | spike doping |
1st Author's Name | Kiyohito SAWADA |
1st Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
2nd Author's Name | Safumi SUZUKI |
2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
3rd Author's Name | Atsushi TERANISHI |
3rd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
4th Author's Name | Masato SHIRAISHI |
4th Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
5th Author's Name | Masahiro ASADA |
5th Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
6th Author's Name | Hiroki SUGIYAMA |
6th Author's Affiliation | NTT Photonics Laboratories |
7th Author's Name | Haruki YOKOYAMA |
7th Author's Affiliation | NTT Photonics Laboratories |
Date | 2009-11-30 |
Paper # | ED2009-166 |
Volume (vol) | vol.109 |
Number (no) | 313 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |