Presentation 2009-11-30
Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Kiyohito SAWADA, Safumi SUZUKI, Atsushi TERANISHI, Masato SHIRAISHI, Masahiro ASADA, Hiroki SUGIYAMA, Haruki YOKOYAMA,
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Abstract(in English) We demonstrate fundamental oscillations at around 900GHz with low bias voltages in resonant tunneling diodes (RTDs) having spike-doping structures. The voltages at the current peak were 0.67 and 0.4V for RTDs with the spike doping concentrations of 2x10^<18> and 1x10^<19>cm^<-3>, respectively, while 0.94V without spike doping. The peak current densities were around 18mA/μm^2, almost unchanged with the spike doping. The highest oscillation frequency in this study was 898GHz at 0.53-μm^2-mesa area for the RTD with spike doping concentration of 2x10^<18>cm^<-3>.
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Keyword(in English) resonant tunneling diode / THz oscillators / spike doping
Paper # ED2009-166
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Committee ED
Conference Date 2009/11/22(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Sub Title (in English)
Keyword(1) resonant tunneling diode
Keyword(2) THz oscillators
Keyword(3) spike doping
1st Author's Name Kiyohito SAWADA
1st Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology()
2nd Author's Name Safumi SUZUKI
2nd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
3rd Author's Name Atsushi TERANISHI
3rd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
4th Author's Name Masato SHIRAISHI
4th Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
5th Author's Name Masahiro ASADA
5th Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
6th Author's Name Hiroki SUGIYAMA
6th Author's Affiliation NTT Photonics Laboratories
7th Author's Name Haruki YOKOYAMA
7th Author's Affiliation NTT Photonics Laboratories
Date 2009-11-30
Paper # ED2009-166
Volume (vol) vol.109
Number (no) 313
Page pp.pp.-
#Pages 4
Date of Issue