| Presentation | 2009-10-22 Integrated 2-bit memory elements based on bi-stability between different lateral modes using active multi-mode-interferometer (MMI) for random access memory (RAM) application Haisong Jiang, Hany Ayad Bastawrous, Yuichiro Tahara, Shinji Matsuo, Kiichi Hamamoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To realize highly integrated optical memory elements for optical random access memory (RAM) application, common single-current driving condition must be realized for all the integrated devices even in case of their further downsizing. We demonstrate wide hysteresis window bi-stable laser diodes (BLDs) based on active multimode interferometer (MMI) using different lateral propagation modes. They have a superior controllability in the portion of cross-gain saturation (XGS) region length, which leads to wide hysteresis allowing common single-current driving for the integrated devices. The implemented devices showed extremely wide and uniform hysteresis windows of 32mA±2mA (operation current around 70mA), with relatively high ON/OFF ratio of 18dB in 315x600μm^2 total device size. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | active MMI / bi-stability laser diode / cross-gain saturation region / integrated memory element |
| Paper # | OCS2009-41,OPE2009-107,LQE2009-66 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Integrated 2-bit memory elements based on bi-stability between different lateral modes using active multi-mode-interferometer (MMI) for random access memory (RAM) application |
| Sub Title (in English) | |
| Keyword(1) | active MMI |
| Keyword(2) | bi-stability laser diode |
| Keyword(3) | cross-gain saturation region |
| Keyword(4) | integrated memory element |
| 1st Author's Name | Haisong Jiang |
| 1st Author's Affiliation | I-Eggs (Interdisciplinary Graduate School of Engineering Sciences), Kyushu University() |
| 2nd Author's Name | Hany Ayad Bastawrous |
| 2nd Author's Affiliation | I-Eggs (Interdisciplinary Graduate School of Engineering Sciences), Kyushu University |
| 3rd Author's Name | Yuichiro Tahara |
| 3rd Author's Affiliation | I-Eggs (Interdisciplinary Graduate School of Engineering Sciences), Kyushu University |
| 4th Author's Name | Shinji Matsuo |
| 4th Author's Affiliation | NTT photonics laboratories |
| 5th Author's Name | Kiichi Hamamoto |
| 5th Author's Affiliation | I-Eggs (Interdisciplinary Graduate School of Engineering Sciences), Kyushu University |
| Date | 2009-10-22 |
| Paper # | OCS2009-41,OPE2009-107,LQE2009-66 |
| Volume (vol) | vol.109 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |