Presentation 2009-10-23
High-power RF InGaAs/InP p-i-n PD
Shigetaka ITAKURA, Kiyohide SAKAI, Eitaro ISHIMURA, Masaharu NAKAJI, Toshitaka AOYAGI, Yoshihito HIRANO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We proposed a high-power RF InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region for RF photonic links, and demonstrated a 3-dB bandwidth of 7GHz, an RF power output of 29.0dBm at 5GHz, and a third order intercept point of 37dBm at 5GHz using a 70-μm-diameter PD.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) photodetectors / photodiodes (PD) / p-i-n photodiodes / microwave photonics
Paper # OCS2009-80,OPE2009-146,LQE2009-105
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Conference Information
Committee OCS
Conference Date 2009/10/15(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-power RF InGaAs/InP p-i-n PD
Sub Title (in English)
Keyword(1) photodetectors
Keyword(2) photodiodes (PD)
Keyword(3) p-i-n photodiodes
Keyword(4) microwave photonics
1st Author's Name Shigetaka ITAKURA
1st Author's Affiliation Mitsubishi Electric Corporation Information Technology R & D Center()
2nd Author's Name Kiyohide SAKAI
2nd Author's Affiliation Mitsubishi Electric Corporation Information Technology R & D Center
3rd Author's Name Eitaro ISHIMURA
3rd Author's Affiliation Mitsubishi Electric Corporation High Frequency & Optical Device Works
4th Author's Name Masaharu NAKAJI
4th Author's Affiliation Mitsubishi Electric Corporation High Frequency & Optical Device Works
5th Author's Name Toshitaka AOYAGI
5th Author's Affiliation Mitsubishi Electric Corporation High Frequency & Optical Device Works
6th Author's Name Yoshihito HIRANO
6th Author's Affiliation Mitsubishi Electric Corporation Information Technology R & D Center
Date 2009-10-23
Paper # OCS2009-80,OPE2009-146,LQE2009-105
Volume (vol) vol.109
Number (no) 243
Page pp.pp.-
#Pages 5
Date of Issue