Presentation	2009-10-23 Fundamental study on PLZT optical memory switch Kazuhiko INOUE, Takeshi MORITA,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	PLZT is a ferroelectric electro-optic material, which needs a constant voltage supply to keep a certain optical property. On the contrary, we propose a memory effect on optical properties by focusing attention on hysteresis characteristics. The key-point is to use asymmetric pulse voltage. In the positive direction, the sufficiently-large voltage is applied. After this operation, relatively small light transmittance property is memorized after removing the electrical field. While in the negative direction, the amplitude of voltage is adjusted to the coercive electrical field. With this voltage supply, the maximum light transmittance status can be kept after removig the electrical field. Therefore, PLZT can obtain two light transmittance states.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	PLZT / Memory effect / Electro-optic effect / Domain control
Paper #	US2009-69
Date of Issue

Conference Information
Committee	US
Conference Date	2009/10/15(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Ultrasonics (US)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Fundamental study on PLZT optical memory switch
Sub Title (in English)
Keyword(1)	PLZT
Keyword(2)	Memory effect
Keyword(3)	Electro-optic effect
Keyword(4)	Domain control
1st Author's Name	Kazuhiko INOUE
1st Author's Affiliation	Graduate School of Frontier Sciences, The Univ. of Tokyo()
2nd Author's Name	Takeshi MORITA
2nd Author's Affiliation	Graduate School of Frontier Sciences, The Univ. of Tokyo
Date	2009-10-23
Paper #	US2009-69
Volume (vol)	vol.109
Number (no)	239
Page	pp.pp.-
#Pages	4
Date of Issue