| Presentation | 2009-09-25 C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE Hisao SHIGEMATSU, Yusuke INOUE, Akihiko AKASEGAWA, Satoshi MASUDA, Masao YAMADA, Masahito KANAMURA, Toshihiro OHKI, Kozo MAKIYAMA, Naoya OKAMOTO, Kenji IMANISHI, Toshihide KIKKAWA, Kazukiyo JOSHIN, Naoki HARA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band power amplifier with over 340-W output power using 0.8-μm GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 101-W output power and 53-% PAE at 9.8GHz. This is the highest PAE ever reported X-band power amplifiers with over 50-W output power. We also obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8GHz. This is also the highest output power ever reported C-band power amplifiers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | C-band / X-band / GaN / high output power / high efficiency / amplifier |
| Paper # | MW2009-86 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2009/9/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE |
| Sub Title (in English) | |
| Keyword(1) | C-band |
| Keyword(2) | X-band |
| Keyword(3) | GaN |
| Keyword(4) | high output power |
| Keyword(5) | high efficiency |
| Keyword(6) | amplifier |
| 1st Author's Name | Hisao SHIGEMATSU |
| 1st Author's Affiliation | FUJITSU LABORATORIES LTD.() |
| 2nd Author's Name | Yusuke INOUE |
| 2nd Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 3rd Author's Name | Akihiko AKASEGAWA |
| 3rd Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 4th Author's Name | Satoshi MASUDA |
| 4th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 5th Author's Name | Masao YAMADA |
| 5th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 6th Author's Name | Masahito KANAMURA |
| 6th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 7th Author's Name | Toshihiro OHKI |
| 7th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 8th Author's Name | Kozo MAKIYAMA |
| 8th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 9th Author's Name | Naoya OKAMOTO |
| 9th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 10th Author's Name | Kenji IMANISHI |
| 10th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 11th Author's Name | Toshihide KIKKAWA |
| 11th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 12th Author's Name | Kazukiyo JOSHIN |
| 12th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| 13th Author's Name | Naoki HARA |
| 13th Author's Affiliation | FUJITSU LABORATORIES LTD. |
| Date | 2009-09-25 |
| Paper # | MW2009-86 |
| Volume (vol) | vol.109 |
| Number (no) | 210 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |