Presentation 2009-09-04
Evaluation of Ferromagnetic Thin Film RF Noise Suppressor applied to On-Chip Transmission Lines for the Purpose of Noise Suppression in Semiconductor Devices
Sho Muroga, Yasushi Endo, Mitsuru Suzuki, Takayoshi Inagaki, Yoshio Mitsuzuka, Masahiro Yamaguchi,
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Abstract(in English) The noise suppression on the transmission line, fabricated in a 0.15μm five metals SOI-CMOS technology with high resistivity substrate, has been demonstrated using the CoZrNb soft magnetic film. The power loss of 37% was obtained at the frequency of 7GHz in coplanar line with film and 17% was obtained at the frequency of 5.4GHz in microstrip line with film. As a result, a large loss was obtained by short length of the transmission line.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Thin Film RF Noise Suppressor / Ferromagnetic Film / EMC
Paper # EMCJ2009-36
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Conference Information
Committee EMCJ
Conference Date 2009/8/28(1days)
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Paper Information
Registration To Electromagnetic Compatibility (EMCJ)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of Ferromagnetic Thin Film RF Noise Suppressor applied to On-Chip Transmission Lines for the Purpose of Noise Suppression in Semiconductor Devices
Sub Title (in English)
Keyword(1) Thin Film RF Noise Suppressor
Keyword(2) Ferromagnetic Film
Keyword(3) EMC
1st Author's Name Sho Muroga
1st Author's Affiliation School of Engineering, Tohoku University()
2nd Author's Name Yasushi Endo
2nd Author's Affiliation School of Engineering, Tohoku University
3rd Author's Name Mitsuru Suzuki
3rd Author's Affiliation School of Engineering, Tohoku University
4th Author's Name Takayoshi Inagaki
4th Author's Affiliation School of Engineering, Tohoku University
5th Author's Name Yoshio Mitsuzuka
5th Author's Affiliation School of Engineering, Tohoku University
6th Author's Name Masahiro Yamaguchi
6th Author's Affiliation School of Engineering, Tohoku University
Date 2009-09-04
Paper # EMCJ2009-36
Volume (vol) vol.109
Number (no) 185
Page pp.pp.-
#Pages 6
Date of Issue