Presentation 2009-08-20
Fabrication and Characterization of VCSELs using Lateral Quantum Structure Intermixing
Yuta SUGAWARA, Takuya USHIO, Tomoyuki MIYAMOTO,
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Abstract(in English) A quantum structure intermixing (QSI) technique that suppresses the carrier diffusion and surface recombination current was applied to vertical cavity surface emitting lasers (VCSELs) for decrease of the device size and power consumption, and increase of the efficiency. The QSI process of applying the thermal annealing after SiO_2 deposition has been examined in quantum well samples. VCSELs were fabricated by using the QSI process from lateral direction at the mesa side wall. A 15μm square mesa VCSEL showed 70% decrease of the threshold current and 70% increase of the quantum efficiency in comparison with a non-QSI VCSEL. We also discuss another mechanism of improved characteristics besides the QSI technique.
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Keyword(in English) VCSEL / Quantum Structure Intermixing / Low threshold / High Efficiency
Paper # EMD2009-41,CPM2009-65,OPE2009-89,LQE2009-48
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Committee LQE
Conference Date 2009/8/13(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and Characterization of VCSELs using Lateral Quantum Structure Intermixing
Sub Title (in English)
Keyword(1) VCSEL
Keyword(2) Quantum Structure Intermixing
Keyword(3) Low threshold
Keyword(4) High Efficiency
1st Author's Name Yuta SUGAWARA
1st Author's Affiliation P & I Lab., Tokyo Institute of Technology()
2nd Author's Name Takuya USHIO
2nd Author's Affiliation P & I Lab., Tokyo Institute of Technology
3rd Author's Name Tomoyuki MIYAMOTO
3rd Author's Affiliation P & I Lab., Tokyo Institute of Technology
Date 2009-08-20
Paper # EMD2009-41,CPM2009-65,OPE2009-89,LQE2009-48
Volume (vol) vol.109
Number (no) 176
Page pp.pp.-
#Pages 6
Date of Issue