| Presentation | 2009-06-26 Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | During the programming operation of the NAND-type flash memory array, the program-inhibited cell is biased with positive voltages on the source and drain (S/D) junctions while program voltage is applied on the word-line (WL), which enables the self-boosting of Si channel potential to avoid unwanted program operation. As the device is aggressively scaled down and the channel doping concentration is increased accordingly, the couplings among WL, floating gate or storage node, and Si channel which are crucial factor in the self-boosting scheme should be investigated more thoroughly. In this work, the dependence of channel potential self-boosting on the channel length and doping concentration in 2-D conventional planar and 3-D FinFET NAND-type flash memory devices based on bulk-Si is investigated by numerical device simulation. Since there is seldom feasible ways of measuring the channel potential by physical probing, series of simulation works are thought to offer insightful results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | NAND-type flash memory / program inhibition / self-boosting / FinFET / device simulation |
| Paper # | ED2009-101,SDM2009-96 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices |
| Sub Title (in English) | |
| Keyword(1) | NAND-type flash memory |
| Keyword(2) | program inhibition |
| Keyword(3) | self-boosting |
| Keyword(4) | FinFET |
| Keyword(5) | device simulation |
| 1st Author's Name | Seongjae Cho |
| 1st Author's Affiliation | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University() |
| 2nd Author's Name | Jung Hoon Lee |
| 2nd Author's Affiliation | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University |
| 3rd Author's Name | Yun Kim |
| 3rd Author's Affiliation | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University |
| 4th Author's Name | Jang-Gn Yun |
| 4th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University |
| 5th Author's Name | Hyungcheol Shin |
| 5th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University |
| 6th Author's Name | Byung-Gook Park |
| 6th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University |
| Date | 2009-06-26 |
| Paper # | ED2009-101,SDM2009-96 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |