| 講演名 | 2009-06-26 Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices , |
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| 抄録(英) | During the programming operation of the NAND-type flash memory array, the program-inhibited cell is biased with positive voltages on the source and drain (S/D) junctions while program voltage is applied on the word-line (WL), which enables the self-boosting of Si channel potential to avoid unwanted program operation. As the device is aggressively scaled down and the channel doping concentration is increased accordingly, the couplings among WL, floating gate or storage node, and Si channel which are crucial factor in the self-boosting scheme should be investigated more thoroughly. In this work, the dependence of channel potential self-boosting on the channel length and doping concentration in 2-D conventional planar and 3-D FinFET NAND-type flash memory devices based on bulk-Si is investigated by numerical device simulation. Since there is seldom feasible ways of measuring the channel potential by physical probing, series of simulation works are thought to offer insightful results. |
| キーワード(和) | |
| キーワード(英) | NAND-type flash memory / program inhibition / self-boosting / FinFET / device simulation |
| 資料番号 | ED2009-101,SDM2009-96 |
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| 研究会情報 | |
| 研究会 | SDM |
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| 開催期間 | 2009/6/17(から1日開催) |
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| 申込み研究会 | Silicon Device and Materials (SDM) |
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| 本文の言語 | ENG |
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| タイトル（英） | Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices |
| サブタイトル（和） | |
| キーワード(1)（和/英） | / NAND-type flash memory |
| 第 1 著者 氏名（和/英） | / Seongjae Cho |
| 第 1 著者 所属（和/英） | Inter-university Semiconductor Research Center (ISRC):School of Electrical Engineering and Computer Science, Seoul National University |
| 発表年月日 | 2009-06-26 |
| 資料番号 | ED2009-101,SDM2009-96 |
| 巻番号（vol） | vol.109 |
| 号番号（no） | 98 |
| ページ範囲 | pp.- |
| ページ数 | 4 |
| 発行日 | |