| Presentation | 2009-06-26 Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time Woojun Lee, Woo Young Choi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A capacitorless dynamic random access memory (DRAM) cell is proposed for low voltage operation with device scaling-down. The proposed DRAM cell features low body doping concentration and recessed gate. Low doping body is introduced to use punch-through as a program mechanism. Punch-through occurs easily in the case of low doping body concentration. Therefore low doping body allows high speed operation in spite of low operation voltage. However low doping body leads to severe drain induced barrier lowering (DIBL). DIBL reduces data retention time. Recessed gate structure can suppress DIBL and increase data retention time. Finally, The proposed capacitorless DRAM cell has long data retention time and operates with low operating voltage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | low voltage / retention time / capacitorless DRAM / recessed gate / low doping body |
| Paper # | ED2009-99,SDM2009-94 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time |
| Sub Title (in English) | |
| Keyword(1) | low voltage |
| Keyword(2) | retention time |
| Keyword(3) | capacitorless DRAM |
| Keyword(4) | recessed gate |
| Keyword(5) | low doping body |
| 1st Author's Name | Woojun Lee |
| 1st Author's Affiliation | Dept. of Electronic Eng., Sogang Univ.() |
| 2nd Author's Name | Woo Young Choi |
| 2nd Author's Affiliation | Dept. of Electronic Eng., Sogang Univ. |
| Date | 2009-06-26 |
| Paper # | ED2009-99,SDM2009-94 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |