| Presentation | 2009-06-26 Future High Density Memory with Vertical Structured Device Technology Tetsuo Endoh, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar-bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation; a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with Vertical structured device technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Memory / Flash Memory / DRAM / 3D structure / Vertical Device / Stacked Vertical Device |
| Paper # | ED2009-95,SDM2009-90 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Future High Density Memory with Vertical Structured Device Technology |
| Sub Title (in English) | |
| Keyword(1) | Memory |
| Keyword(2) | Flash Memory |
| Keyword(3) | DRAM |
| Keyword(4) | 3D structure |
| Keyword(5) | Vertical Device |
| Keyword(6) | Stacked Vertical Device |
| 1st Author's Name | Tetsuo Endoh |
| 1st Author's Affiliation | Center for Interdisciplinary Research, Tohoku University() |
| Date | 2009-06-26 |
| Paper # | ED2009-95,SDM2009-90 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |