| Presentation | 2009-06-26 Fabrication of double-dot single-electron transistor in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi, Yasuo Takahashi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pattern-dependent oxidation (PADOX). It is well known that the PADOX convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We demonstrated a fabrication of a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single electron / Coulomb blockade / double dot / silicon / SOI |
| Paper # | ED2009-94,SDM2009-89 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of double-dot single-electron transistor in silicon nanowire |
| Sub Title (in English) | |
| Keyword(1) | single electron |
| Keyword(2) | Coulomb blockade |
| Keyword(3) | double dot |
| Keyword(4) | silicon |
| Keyword(5) | SOI |
| 1st Author's Name | Mingyu Jo |
| 1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ.() |
| 2nd Author's Name | Takuya Kaizawa |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 3rd Author's Name | Masashi Arita |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 4th Author's Name | Akira Fujiwara |
| 4th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 5th Author's Name | Yukinori Ono |
| 5th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 6th Author's Name | Hiroshi Inokawa |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka Univ. |
| 7th Author's Name | Jung-Bum Choi |
| 7th Author's Affiliation | Physics and Research Institute of NanoScience and Technology, Chungbuk National Univ. |
| 8th Author's Name | Yasuo Takahashi |
| 8th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| Date | 2009-06-26 |
| Paper # | ED2009-94,SDM2009-89 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |