Presentation 2009-06-25
Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo Endoh, Koji Sakui, Yukio Yasuda,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the first time. It is made clear that M-Vertical MOSFET, in comparison with the conventional Single Pillar type (S-) Vertical MOSFET, achieve an increased driving current by more than 2 times, a nearly ideal S-factor, and a suppressed cutoff-leakage current by less than 1/60 by suppressing short channel effect and by suppressing the DIBL effect. Moreover, mechanisms of these improvements of the M-Vertical MOSFET are made clear. From all of the above, it is shown that M-Vertical MOSFET is a key device candidate for future high speed and low power LSI's in the sub- 10nm generation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Vertical MOSFET / 3D structured Device / MOSFET / LSI
Paper # ED2009-90,SDM2009-85
Date of Issue

Conference Information
Committee SDM
Conference Date 2009/6/17(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
Sub Title (in English)
Keyword(1) Vertical MOSFET
Keyword(2) 3D structured Device
Keyword(3) MOSFET
Keyword(4) LSI
1st Author's Name Tetsuo Endoh
1st Author's Affiliation Center for Interdisciplinary Research, TOHOKU UNIVERSITY:JST CREST()
2nd Author's Name Koji Sakui
2nd Author's Affiliation Center for Interdisciplinary Research, TOHOKU UNIVERSITY:JST CREST
3rd Author's Name Yukio Yasuda
3rd Author's Affiliation Center for Interdisciplinary Research, TOHOKU UNIVERSITY:JST CREST
Date 2009-06-25
Paper # ED2009-90,SDM2009-85
Volume (vol) vol.109
Number (no) 98
Page pp.pp.-
#Pages 4
Date of Issue