Presentation | 2009-06-25 Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo Endoh, Koji Sakui, Yukio Yasuda, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the first time. It is made clear that M-Vertical MOSFET, in comparison with the conventional Single Pillar type (S-) Vertical MOSFET, achieve an increased driving current by more than 2 times, a nearly ideal S-factor, and a suppressed cutoff-leakage current by less than 1/60 by suppressing short channel effect and by suppressing the DIBL effect. Moreover, mechanisms of these improvements of the M-Vertical MOSFET are made clear. From all of the above, it is shown that M-Vertical MOSFET is a key device candidate for future high speed and low power LSI's in the sub- 10nm generation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Vertical MOSFET / 3D structured Device / MOSFET / LSI |
Paper # | ED2009-90,SDM2009-85 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2009/6/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET |
Sub Title (in English) | |
Keyword(1) | Vertical MOSFET |
Keyword(2) | 3D structured Device |
Keyword(3) | MOSFET |
Keyword(4) | LSI |
1st Author's Name | Tetsuo Endoh |
1st Author's Affiliation | Center for Interdisciplinary Research, TOHOKU UNIVERSITY:JST CREST() |
2nd Author's Name | Koji Sakui |
2nd Author's Affiliation | Center for Interdisciplinary Research, TOHOKU UNIVERSITY:JST CREST |
3rd Author's Name | Yukio Yasuda |
3rd Author's Affiliation | Center for Interdisciplinary Research, TOHOKU UNIVERSITY:JST CREST |
Date | 2009-06-25 |
Paper # | ED2009-90,SDM2009-85 |
Volume (vol) | vol.109 |
Number (no) | 98 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |