Presentation 2009-06-25
Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh,
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Abstract(in English) We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Shrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.
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Keyword(in English) Vertical MOSFET / Quantum Electro-Dynamics / Resonant Tunneling / Electron Transport
Paper # ED2009-89,SDM2009-84
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Conference Information
Committee SDM
Conference Date 2009/6/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on Quantum Electro-Dynamics in Vertical MOSFET
Sub Title (in English)
Keyword(1) Vertical MOSFET
Keyword(2) Quantum Electro-Dynamics
Keyword(3) Resonant Tunneling
Keyword(4) Electron Transport
1st Author's Name Masakazu Muraguchi
1st Author's Affiliation Center for Interdisciplinary Research, Tohoku University()
2nd Author's Name Tetsuo Endoh
2nd Author's Affiliation Center for Interdisciplinary Research, Tohoku University
Date 2009-06-25
Paper # ED2009-89,SDM2009-84
Volume (vol) vol.109
Number (no) 98
Page pp.pp.-
#Pages 4
Date of Issue