Presentation 2009-06-25
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
C.-H. Cho, H.-Y Cha,
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Abstract(in English) We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. Traditionally, VDP structures were used for the measurement of sheet resistance, R_s. However, as stress sensors, these are currently widely used to measure the die stresses in electronic packages because of their characteristics of higher sensitivities compared to the conventional resistor sensors. This work focuses on a study of strain effects in VDP stress sensors fabricated on (111) silicon, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. Measurements were performed using resistor stress sensors as well as VDP stress sensors fabricated on (111) silicon, and corrected values of the Magnification factor coefficients are confirmed experimentally by comparing pairs of VDP stress sensor and resistive stress sensor. Also, the stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors. Four-point bending (4PB) was used to generate the required stress in strip-on-beam samples.
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Keyword(in English) VDP (van der Pauw) / strain effects / (111) silicon / stress sensors / piezo-resistive coefficients
Paper # ED2009-88,SDM2009-83
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Conference Information
Committee SDM
Conference Date 2009/6/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
Sub Title (in English)
Keyword(1) VDP (van der Pauw)
Keyword(2) strain effects
Keyword(3) (111) silicon
Keyword(4) stress sensors
Keyword(5) piezo-resistive coefficients
1st Author's Name C.-H. Cho
1st Author's Affiliation Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University()
2nd Author's Name H.-Y Cha
2nd Author's Affiliation School of Electronic & Electrical Engineering, College of Engineering, Hongik Unversity
Date 2009-06-25
Paper # ED2009-88,SDM2009-83
Volume (vol) vol.109
Number (no) 98
Page pp.pp.-
#Pages 4
Date of Issue