講演名 2009-06-25
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
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抄録(和)
抄録(英) We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. Traditionally, VDP structures were used for the measurement of sheet resistance, R_s. However, as stress sensors, these are currently widely used to measure the die stresses in electronic packages because of their characteristics of higher sensitivities compared to the conventional resistor sensors. This work focuses on a study of strain effects in VDP stress sensors fabricated on (111) silicon, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. Measurements were performed using resistor stress sensors as well as VDP stress sensors fabricated on (111) silicon, and corrected values of the Magnification factor coefficients are confirmed experimentally by comparing pairs of VDP stress sensor and resistive stress sensor. Also, the stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors. Four-point bending (4PB) was used to generate the required stress in strip-on-beam samples.
キーワード(和)
キーワード(英) VDP (van der Pauw) / strain effects / (111) silicon / stress sensors / piezo-resistive coefficients
資料番号 ED2009-88,SDM2009-83
発行日

研究会情報
研究会 SDM
開催期間 2009/6/17(から1日開催)
開催地(和)
開催地(英)
テーマ(和)
テーマ(英)
委員長氏名(和)
委員長氏名(英)
副委員長氏名(和)
副委員長氏名(英)
幹事氏名(和)
幹事氏名(英)
幹事補佐氏名(和)
幹事補佐氏名(英)

講演論文情報詳細
申込み研究会 Silicon Device and Materials (SDM)
本文の言語 ENG
タイトル(和)
サブタイトル(和)
タイトル(英) Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
サブタイトル(和)
キーワード(1)(和/英) / VDP (van der Pauw)
第 1 著者 氏名(和/英) / C.-H. Cho
第 1 著者 所属(和/英)
Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University
発表年月日 2009-06-25
資料番号 ED2009-88,SDM2009-83
巻番号(vol) vol.109
号番号(no) 98
ページ範囲 pp.-
ページ数 4
発行日