| Presentation | 2009-06-24 A New Combination of RSD and Inside Spacer Thin Film Transistor M. J. Chang, T. C. Li, F. T. Chien, C. N. Liao, Y. T. Tsai, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we proposed a combination structure polycrystalline silicon (poly-Si) thin film transistor of raised source/drain (RSD) and inside spacer (IS). From the experiment and simulation of electric field, it shows the lower electric field strength than the conventional one. Therefore it can decrease the kink current and lower leakage current can be achieved. Moreover our proposed structure had almost the same on/off current ratio compared with conventional. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | raised source/drain (RSD) / inside spacer (IS) / high-k material / leakage current / on/off current raito |
| Paper # | ED2009-67,SDM2009-62 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A New Combination of RSD and Inside Spacer Thin Film Transistor |
| Sub Title (in English) | |
| Keyword(1) | raised source/drain (RSD) |
| Keyword(2) | inside spacer (IS) |
| Keyword(3) | high-k material |
| Keyword(4) | leakage current |
| Keyword(5) | on/off current raito |
| 1st Author's Name | M. J. Chang |
| 1st Author's Affiliation | Dept. of Electronic Engineering, Feng Chia University() |
| 2nd Author's Name | T. C. Li |
| 2nd Author's Affiliation | Dept. of Electronic Engineering, Feng Chia University |
| 3rd Author's Name | F. T. Chien |
| 3rd Author's Affiliation | Dept. of Electronic Engineering, Feng Chia University |
| 4th Author's Name | C. N. Liao |
| 4th Author's Affiliation | Dept. of Electrical Engineering, National Central University |
| 5th Author's Name | Y. T. Tsai |
| 5th Author's Affiliation | Dept. of Electrical Engineering, National Central University |
| Date | 2009-06-24 |
| Paper # | ED2009-67,SDM2009-62 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |