| Presentation | 2009-06-24 Electrical characteristics of OFETs with thin gate dielectric Y-U Song, S. Ohmi, H. Ishiwara, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to realize low voltage operation of pentacene-based field-effect-transistors (FETs), we have fabricated pantacene-based metal-oxide-semiconductor (MOS) diodes and FETs with thin SiO_2 gate dielectric, such as 3-10nm. Excellent capacitance-voltage (C-V) characteristics of pentacene-based MOS diodes were observed with small hysteresis width even though the gate dielectric thickness was very thin, such as 3nm. It also showed high mobility as 0.3cm^2/Vs and low operation voltage in the pentacene FETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pentacene / OFETs / pentacene mobility / low operation voltage |
| Paper # | ED2009-63,SDM2009-58 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical characteristics of OFETs with thin gate dielectric |
| Sub Title (in English) | |
| Keyword(1) | pentacene |
| Keyword(2) | OFETs |
| Keyword(3) | pentacene mobility |
| Keyword(4) | low operation voltage |
| 1st Author's Name | Y-U Song |
| 1st Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | S. Ohmi |
| 2nd Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | H. Ishiwara |
| 3rd Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2009-06-24 |
| Paper # | ED2009-63,SDM2009-58 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |