| Presentation | 2009-06-24 Theoretical study on graphene field-effect transistors Eiichi SANO, Taiichi OTSUJI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Graphene is one of the most attractive materials for "beyond CMOS" electronics. We investigate graphene-layer compositions suitable for the channel in graphene field-effect transistors (GFETs) in terms of the energy band structure and charge controllability. We examine three major methods of opening a bandgap in graphene. We then compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects for GFETs, where graphene is modeled as a narrow-gap semiconductor based on the band consideration, with those for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene / Energy band structure / Effective mass / MOSFET / SOI / Delay |
| Paper # | ED2009-62,SDM2009-57 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical study on graphene field-effect transistors |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | Energy band structure |
| Keyword(3) | Effective mass |
| Keyword(4) | MOSFET |
| Keyword(5) | SOI |
| Keyword(6) | Delay |
| 1st Author's Name | Eiichi SANO |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:CREST, Japan Science and Technology Agency() |
| 2nd Author's Name | Taiichi OTSUJI |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University:CREST, Japan Science and Technology Agency |
| Date | 2009-06-24 |
| Paper # | ED2009-62,SDM2009-57 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |