Presentation 2009-06-24
Metrology of microscopic properties of graphene on SiC
M. Nagase, H. Hibino, H. Kageshima, H Yamaguchi,
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Abstract(in English) Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC.
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Keyword(in English) Graphene / SiC / low-energy electron microscopy (LEEM) / scanning probe microscopy (SPM) / nano-gap electrode / local conductance
Paper # ED2009-61,SDM2009-56
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Committee SDM
Conference Date 2009/6/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Metrology of microscopic properties of graphene on SiC
Sub Title (in English)
Keyword(1) Graphene
Keyword(2) SiC
Keyword(3) low-energy electron microscopy (LEEM)
Keyword(4) scanning probe microscopy (SPM)
Keyword(5) nano-gap electrode
Keyword(6) local conductance
1st Author's Name M. Nagase
1st Author's Affiliation NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.()
2nd Author's Name H. Hibino
2nd Author's Affiliation NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.
3rd Author's Name H. Kageshima
3rd Author's Affiliation NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.
4th Author's Name H Yamaguchi
4th Author's Affiliation NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.
Date 2009-06-24
Paper # ED2009-61,SDM2009-56
Volume (vol) vol.109
Number (no) 98
Page pp.pp.-
#Pages 6
Date of Issue