Presentation | 2009-06-24 Metrology of microscopic properties of graphene on SiC M. Nagase, H. Hibino, H. Kageshima, H Yamaguchi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Graphene / SiC / low-energy electron microscopy (LEEM) / scanning probe microscopy (SPM) / nano-gap electrode / local conductance |
Paper # | ED2009-61,SDM2009-56 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2009/6/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Metrology of microscopic properties of graphene on SiC |
Sub Title (in English) | |
Keyword(1) | Graphene |
Keyword(2) | SiC |
Keyword(3) | low-energy electron microscopy (LEEM) |
Keyword(4) | scanning probe microscopy (SPM) |
Keyword(5) | nano-gap electrode |
Keyword(6) | local conductance |
1st Author's Name | M. Nagase |
1st Author's Affiliation | NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.() |
2nd Author's Name | H. Hibino |
2nd Author's Affiliation | NTT Basic Research Labs., Nippon Telegraph and Telephone Corp. |
3rd Author's Name | H. Kageshima |
3rd Author's Affiliation | NTT Basic Research Labs., Nippon Telegraph and Telephone Corp. |
4th Author's Name | H Yamaguchi |
4th Author's Affiliation | NTT Basic Research Labs., Nippon Telegraph and Telephone Corp. |
Date | 2009-06-24 |
Paper # | ED2009-61,SDM2009-56 |
Volume (vol) | vol.109 |
Number (no) | 98 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |