Presentation 2009-06-24
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Shunichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this work, we propose a high-speed RTS measurement method with a test circuit based on a CMOS image sensor technology and show measurement results which include drain current and temperature dependences of RTS amplitude distributions. Moreover, we expand the range of sampling frequency up to 0.47Hz-3.0MHz and the observation length up to about four hours and it enables us to extract time constant ratios of RTSs which are useful to determine the energetic distribution of RTS traps.
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Keyword(in English) random telegraph signal (RTS) noise / MOSFET / statistical analysis / variability
Paper # ED2009-57,SDM2009-52
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Committee SDM
Conference Date 2009/6/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
Sub Title (in English)
Keyword(1) random telegraph signal (RTS) noise
Keyword(2) MOSFET
Keyword(3) statistical analysis
Keyword(4) variability
1st Author's Name Kenichi Abe
1st Author's Affiliation Graduate School of Engineering, Tohoku University()
2nd Author's Name Takafumi Fujisawa
2nd Author's Affiliation Graduate School of Engineering, Tohoku University
3rd Author's Name Akinobu Teramoto
3rd Author's Affiliation New Industry Creation Hatchery Center, Tohoku University
4th Author's Name Shunichi Watabe
4th Author's Affiliation Graduate School of Engineering, Tohoku University
5th Author's Name Shigetoshi Sugawa
5th Author's Affiliation Graduate School of Engineering, Tohoku University
6th Author's Name Tadahiro Ohmi
6th Author's Affiliation New Industry Creation Hatchery Center, Tohoku University
Date 2009-06-24
Paper # ED2009-57,SDM2009-52
Volume (vol) vol.109
Number (no) 98
Page pp.pp.-
#Pages 4
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