Presentation	2009-06-24 A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology Seung-Woo Seo, Jae-Sung Rieh,
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Abstract(in English)	In this work, a divide-by-2 injection locked frequency divider (ILFD) operating in the V-band with a low V_ has been developed in a commercial 0.13-μm Si RFCMOS technology. The bias current path was separated from the injection signal path, which enabled a supply voltage as low as 0.5V. All inductors and interconnection lines were designed based on EM (electromagnetic) simulator for precise prediction of circuit performance. With varactor tuning voltage ranged for 0～1.2V, the free-running oscillation frequency varied from 27.43 to 28.06GHz. At 0dBm input power, the frequency divider exhibited a locking range of 5.8GHz from 53 to 58.8GHz without external tuning mechanism. The fabricated circuit size is 0.72mm×0.62mm including the RF and DC supply pads.
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Keyword(in English)	millimeter-wave (MMW) / RFCMOS / injection locked frequency divider
Paper #	ED2009-56,SDM2009-51
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Conference Information
Committee	SDM
Conference Date	2009/6/17(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology
Sub Title (in English)
Keyword(1)	millimeter-wave (MMW)
Keyword(2)	RFCMOS
Keyword(3)	injection locked frequency divider
1st Author's Name	Seung-Woo Seo
1st Author's Affiliation	Electronics and Computer Engineering, Korea University()
2nd Author's Name	Jae-Sung Rieh
2nd Author's Affiliation	Electronics and Computer Engineering, Korea University
Date	2009-06-24
Paper #	ED2009-56,SDM2009-51
Volume (vol)	vol.109
Number (no)	98
Page	pp.pp.-
#Pages	4
Date of Issue